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            當前位置:首頁   >  產品中心  >  二維材料  >  六方氮化硼  >  基于銅基的單層氮化硼薄膜(5*2.5cm)

            基于銅基的單層氮化硼薄膜(5*2.5cm)

            簡要描述:Single layer h-BN (Boron Nitride) film grown in copper foil.
            h-BN is an insulator with a direct band gap of 5.97 eV. Due to its strong covalent sp2 bonds in the plane, the in-plane mechanical strength

            • 產品型號:
            • 廠商性質:生產廠家
            • 更新時間:2018-07-02
            • 訪  問  量:572

            詳細介紹

            Single layer h-BN (Boron Nitride) film grown in copper foil.

            h-BN is an insulator with a direct band gap of 5.97 eV. Due to its strong covalent sp2 bonds in the plane, the in-plane mechanical strength and thermal conductivity of h-BN has been reported to be close to that of graphene. h-BN has an even higher chemical stability than graphene; it can be stable in air up to 1000 °C (in contrast, for graphene the corresponding temperature is 600 °C).

            During Chemical Vapor Deposition, BN is grown on both sides of the copper foil

            Specifications:

            Close to complete coverage (90-95%), with some minor holes

            Thickness of the copper foil is 20 microns

            High crystalline quality, see SAD (Selected area [electron] diffraction) data

            Quality is confirmed by TEM. TEM shows perfect hexagonal structure.

            TEM image of perfect hexagonal structure

            On SEM image (below), BN is seen as wrinkles on top of the copper foil.

            SAD data of h-BN

            If transferred onto an SiO2 substrate, the BN film may be seen as a white film. However, it is difficult to recognize the BN film on copper using a microscope.

            Absorbance data BN on copper

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