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當前位置:首頁   >  產品中心  >  二維材料  >  六方氮化硼  >  基于285nm二氧化硅基底的單層氮化硼薄膜

基于285nm二氧化硅基底的單層氮化硼薄膜

簡要描述:Single Layer CVD hexagonal Boron Nitride Film on 285 nm SiO2/Si substrates (p-doped), 1cmx1cm: 4 pack
Properties of BN film
97% coverage with minor holes and organic residues
High Crystalline Quality

  • 產品型號:
  • 廠商性質:生產廠家
  • 更新時間:2018-07-02
  • 訪  問  量:948

詳細介紹

Single Layer CVD hexagonal Boron Nitride Film on 285 nm SiO2/Si substrates (p-doped), 1cmx1cm: 4 pack

Properties of BN film

97% coverage with minor holes and organic residues

High Crystalline Quality

The Raman spectrum should peak at ~1369cm-1

Single Layer CVD hexagonal Boron Nitride Film on 285 nm SiO2/Si substrates (p-doped), 1cmx1cm: 4 pack

Properties of BN film

97% coverage with minor holes and organic residues

High Crystalline Quality

The Raman spectrum should peak at ~1369cm-1

Single Layer CVD hexagonal Boron Nitride Film on 285 nm SiO2/Si substrates (p-doped), 1cmx1cm: 4 pack

Properties of BN film

97% coverage with minor holes and organic residues

High Crystalline Quality

The Raman spectrum should peak at ~1369cm-1

 

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