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當前位置:首頁   >  產品中心  >  二維材料  >  硒化物晶體  >  二硒化鉬晶體(百分之99.995)2H-MoSe2-P型

二硒化鉬晶體(百分之99.995)2H-MoSe2-P型

簡要描述:二硒化鉬晶體 2H-MoSe2(Molybdenum Diselenide)-P型
晶體尺寸:~10毫米
電學特性:P型半導體
晶體結構:六邊形
晶胞參數:a = b = 0.329 nm, c = 1.289 nm, α = β = 90&#176;, γ = 120&#176;
晶體類型:合成
晶體純度:99.995%

  • 產品型號:
  • 廠商性質:生產廠家
  • 更新時間:2018-07-10
  • 訪  問  量:1346

詳細介紹

二硒化鉬晶體 2H-MoSe2(Molybdenum Diselenide)-P型
晶體尺寸:~10毫米
電學特性:P型半導體
晶體結構:六邊形
晶胞參數:a = b = 0.329 nm, c = 1.289 nm, α = β = 90°, γ = 120°
晶體類型:合成
晶體純度:99.995%

 

X-ray diffraction on a MoSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8

 

Powder X-ray diffraction (XRD) of a single crystal MoSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

 

Stoichiometric analysis of a single crystal MoSe2 by Energy-dispersive X-ray spectroscopy (EDX).

 

Raman spectrum of a single crystal MoSe2. Measurement was performed with a 785 nm Raman system at room temperature.

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