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硒化鎵晶體(百分之99.995)2H-GaSe

簡要描述:硒化鎵晶體 2H-GaSe(Gallium Selenide)
晶體尺寸:10毫米
電學性能:半導體
晶體結構:六邊形
晶胞參數:a = b = 0.374 nm, c = 1.592 nm, α = β = 90&#176;, γ =120&#176;
晶體類型:合成
晶體純度:>99.995%

  • 產品型號:
  • 廠商性質:生產廠家
  • 更新時間:2018-07-10
  • 訪  問  量:1190

詳細介紹

硒化鎵晶體 2H-GaSe(Gallium Selenide)
晶體尺寸:10毫米
電學性能:半導體
晶體結構:六邊形
晶胞參數:a = b = 0.374 nm, c = 1.592 nm, α = β = 90°, γ =120°
晶體類型:合成
晶體純度:>99.995%

X-ray diffraction on a GaSe single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (001) with h = 4, 6, 8, 10, 12

 

Powder X-ray diffraction (XRD) of a single crystal GaSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

 

Stoichiometric analysis of a single crystal GaSe by Energy-dispersive X-ray spectroscopy (EDX).

 

Raman spectrum of a single crystal GaSe. Measurement was performed with a 785 nm Raman system at room temperature.

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